Technical Principle
Gallium Nitride (GaN) is a third-generation semiconductor material. Compared to traditional silicon (Si), it offers higher efficiency, smaller size, and lower heat generation.
- High-Frequency Operation: GaN devices work at higher frequencies, reducing energy loss by over 50%.
- Compact Design: A GaN charger at the same power rating can be 30-50% smaller than silicon-based ones.
Key Advantages
- Ultra-Compact: A 100W GaN charger fits in your palm, while silicon equivalents are twice as bulky.
- Rapid Charging: Enables “0 to 80% in 30 mins” speeds (e.g., OnePlus Warp Charge).
- Smart Safety: Built-in protections against overheating, short circuits, and power surges. Auto-detects devices (phones, laptops, drones).
- Energy Savings: GaN power strips waste less energy as heat, lowering electricity bills.
Scenarios
- Travel: One GaN charger replaces multiple bulky adapters.
- Home Office: A GaN power strip safely powers PCs, monitors, and appliances.